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IXTH 8P50
IXTT 8P50
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
TO-247 (IXTH) Outline
g fs
V DS = -10 V; I D = I D25 , pulse test
4
5
S
C iss
C oss
V GS = 0 V, V DS = -25 V, f = 1 MHz
3400
450
pF
pF
1
2
3
C rss
t d(on)
175
33
pF
ns
t r
V GS = -10 V, V DS = 0.5 V DSS I D = 0.5 I D25
27
ns
t d(off)
R G = 4.7 ? (External)
35
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
35
ns
Dim.
Millimeter
Inches
Q g(on)
Q gs
Q gd
V GS = -10 V, V DS = 0.5 V DSS I D = 0.5 I D25
130
32
64
nC
nC
nC
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
R thJC
R thCS
(TO-247)
0.25
0.7
K/W
K/W
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
R 4.32 5.49
S 6.15 BSC
TO-268 (IXTT) Outline
.170 .216
242 BSC
I S
I SM
V SD
t rr
V GS = 0
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = I S , di/dt = 100 A/ μ s
400
-8
-32
-3
A
A
V
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
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